標題: 下一世代高性能及高可靠性的N通道MOS元件設計及量測技術探討
Key Design and Measurement Issues for Achieving High Performance and High Reliability Next Generation N-Channel MOSFETs
作者: 莊紹勳
Chung Steve S
國立交通大學電子工程學系及電子研究所
公開日期: 2010
官方說明文件#: NSC98-2221-E009-161-MY3
URI: http://hdl.handle.net/11536/100325
https://www.grb.gov.tw/search/planDetail?id=2008464&docId=328515
Appears in Collections:Research Plans


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