次微米n-通道金氧半場效電晶體之模擬和分析

Abstract

本文將描述含有短通道效應之淺摻雜汲極金氧半場效電晶體的萃取技術, 其中包括有效通道長度,通道摻雜濃度分佈,源/汲極摻雜濃度分佈,及由逆 短通道效應造成的摻雜濃度重新分佈.同時,本文亦將移動率模式之參數萃 取出來.利用這些萃取出來的參數,本文可以將製造完成的次微米n-通道金 氧半場效電晶體之I-V特性模擬得非常好.另外,本文將詳盡的探討熱載子 對元件特性退化的影響,並且利用電荷幫浦法來分析.從介面陷阱和氧化層 陷阱的分佈, 我們可以得到在直流應力下介面陷阱或氧化層陷阱的產生和 n-通道金氧半場效電晶體的特性退化之間的關係.正的氧化層陷阱產生可 經過長時間的應力下觀察到.經由這些分析所提出來的方法,我們可以改進 元件的設計來達到高效率和高可靠度的應用. The extraction techniques for submicrometer LDD n-MOSFETs with the Reverse-Short-Channel Effect(RSCE) are described, which include theeffective channel length, implant profiles in channel and source/drainregion, the doping redistribution due the the reverse short channel length effect. Moreover, the model parameters in the mobility model areextracted. It is shown that based on the extracted parameters the I-Vcharacteristics of experimental submicrometer n-MOSFETs can be simulatedvery well. In addition, a detailed study on the hot-carrier effect(HCE) ondevice degradation is made and analyzed by the Charge-Pumping( CP) technique.From the interface traps and oxide traps profiling, we can obtain the relationships between generation of interface traps or oxide traps and the degradation stress conditions. The positive oxide charge generation is observed after a long time stress. Based on these analyses, the proposed methods can improve device design for high-performance and reliability applications.