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dc.contributor.authorLee, Chien-Pingen_US
dc.contributor.authorMa, Wenlongen_US
dc.contributor.authorWang, Nanlei Larryen_US
dc.date.accessioned2014-12-08T15:13:00Z-
dc.date.available2014-12-08T15:13:00Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn1549-8328en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSI.2007.905650en_US
dc.identifier.urihttp://hdl.handle.net/11536/10035-
dc.description.abstractNonlinear distortion of a power amplifier (PA) due to the nonlinear input-output transfer function is studied. The high-order nonlinearity or Fourier components of the output, due to the mixing of input signals, are found to be related to an average integral related to the transfer function, thus giving insight to the cancellation effect of the nonlinearity. A simple formula has been derived to relate the nth-order Fourier component of a nonlinear transfer function with a sinusoidal input to an average integral of the nth-order derivative of the transfer function. The large signal nonlinear distortion of the nth-order can therefore be regarded as a weighted average of the nth-order derivative of the transfer function. For PAs, the averaging effect gives rise to local minima in the intermodulation distortion terms during power sweep because of the cancellation of the positive part and the negative part of the derivative during averaging. We have applied the formula to InGaP heterojunction bipolar transistors PAs and are able to explain most of the observed nonlinear phenomena of the amplifiers.en_US
dc.language.isoen_USen_US
dc.subjectFourier transformsen_US
dc.subjectheterojunction bipolar transistors (HBT)en_US
dc.subjectintermodulation distortion (IMD)en_US
dc.subjectnonlinear distortionen_US
dc.subjectpower amplifiers (PAs)en_US
dc.titleAveraging and cancellation effect of high-order nonlinearity of a power amplifieren_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSI.2007.905650en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERSen_US
dc.citation.volume54en_US
dc.citation.issue12en_US
dc.citation.spage2733en_US
dc.citation.epage2740en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251700100016-
dc.citation.woscount6-
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