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dc.contributor.authorLo, Tien-Yuen_US
dc.contributor.authorHung, Chung-Chihen_US
dc.date.accessioned2014-12-08T15:13:00Z-
dc.date.available2014-12-08T15:13:00Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn1549-7747en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TCSII.2007.907559en_US
dc.identifier.urihttp://hdl.handle.net/11536/10036-
dc.description.abstractThis brief presents a high-linearity operational transconductance amplifier (OTA) based on pseudodifferential structures. The linearity is improved by mobility compensation techniques as the device size is scaled down to achieve high speed operation. Transconductance tuning could be achieved by a MOS operating in the linear region. The OTA fabricated in the 0.18-mu m CMOS process occupies a small area of 4.5 X 10(-3) mm(2). The measured third-order intermodulation (IM3) distortion with a 400 mV(pp) differential input under 1-V power supply voltage remains below -52 dB for frequency up to 50 MHz. The static power consumption is 2.5 mW. Experimental results demonstrate the agreement with theoretical analyses.en_US
dc.language.isoen_USen_US
dc.subjectlow supply voltageen_US
dc.subjectoperational transconductance amplifier (OTA)en_US
dc.subjectstrong inversion regionen_US
dc.subjectsubthreshold regionen_US
dc.subjecttransconductance tuningen_US
dc.titleA 1-V 50-MHz pseudodifferential OTA with compensation of the mobility reductionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TCSII.2007.907559en_US
dc.identifier.journalIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFSen_US
dc.citation.volume54en_US
dc.citation.issue12en_US
dc.citation.spage1047en_US
dc.citation.epage1051en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000251944900005-
dc.citation.woscount9-
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