標題: Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes
作者: Hu, Chen-Ming
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nickel gettering;NILC;polycrystalline silicon
公開日期: 1-Dec-2007
摘要: Ni-metal-induced lateral crystallization (NILC) of amorphous Si (alpha-Si) has been used to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). The current crystallization technology, however, often leads to trap Ni and NiSi2 precipitates, which degrade the device performance. In this study, alpha-Si film was coated on the top of contact holes as Ni-gettering layer. It was found the Ni-metal impurity within the NILC poly-Si film was reduced without addition mask.
URI: http://dx.doi.org/10.1143/JJAP.46.L1188
http://hdl.handle.net/11536/10047
ISSN: 0021-4922
DOI: 10.1143/JJAP.46.L1188
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 46
Issue: 45-49
起始頁: L1188
結束頁: L1190
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