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dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorHuang, Shih-Cheen_US
dc.contributor.authorChen, Wan-Pingen_US
dc.contributor.authorChao, Yu-Teen_US
dc.contributor.authorChou, Yen-Pangen_US
dc.contributor.authorPeng, Guo-Fengen_US
dc.date.accessioned2014-12-08T15:13:02Z-
dc.date.available2014-12-08T15:13:02Z-
dc.date.issued2007-12-01en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2007.903155en_US
dc.identifier.urihttp://hdl.handle.net/11536/10059-
dc.description.abstractIn this paper, the variation characteristics of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) are investigated with a statistical approach. A special layout is proposed to investigate the device variation with respect to various devices distances. Two non-Gaussian equations are proposed to fit the device parameter distributions, whose the coefficients of determination (R(2)) are both near 0.9, reflecting the validity of the model. Two benchmark circuits are used to compare the difference between the proposed model and the conventional Gaussian distribution for the device parameter distribution. The output behaviors of the digital and analog circuits show that the variation in the short range would greatly affect the performance of the analog circuits and would instead be averaged in the digital circuits.en_US
dc.language.isoen_USen_US
dc.subjectpoly-Si thin-film transistor (TFT)en_US
dc.subjectstatistical modelen_US
dc.subjectvariationen_US
dc.titleA statistical model for simulating the effect of UPS TFT device variation for SOP applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JDT.2007.903155en_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.citation.volume3en_US
dc.citation.issue4en_US
dc.citation.spage426en_US
dc.citation.epage433en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000259064600013-
dc.citation.woscount11-
Appears in Collections:Articles


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