标题: A constant-mobility method to enable MOSFET series-resistance extraction
作者: Lin, Da-Wen
Cheng, Ming-Lung
Wang, Shyh-Wei
Wu, Chung-Cheng
Chen, Ming-Jer
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: mobility;MOSFET;series resistance
公开日期: 1-十二月-2007
摘要: A new method of extracting the MOSFET series resistance R-sd is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which, makes the proposed method suitable for short-channel devices.
URI: http://dx.doi.org/10.1109/LED.2007.909850
http://hdl.handle.net/11536/10062
ISSN: 0741-3106
DOI: 10.1109/LED.2007.909850
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 12
起始页: 1132
结束页: 1134
显示于类别:Articles


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