标题: | A constant-mobility method to enable MOSFET series-resistance extraction |
作者: | Lin, Da-Wen Cheng, Ming-Lung Wang, Shyh-Wei Wu, Chung-Cheng Chen, Ming-Jer 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | mobility;MOSFET;series resistance |
公开日期: | 1-十二月-2007 |
摘要: | A new method of extracting the MOSFET series resistance R-sd is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which, makes the proposed method suitable for short-channel devices. |
URI: | http://dx.doi.org/10.1109/LED.2007.909850 http://hdl.handle.net/11536/10062 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2007.909850 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 12 |
起始页: | 1132 |
结束页: | 1134 |
显示于类别: | Articles |
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