A constant-mobility method to enable MOSFET series-resistance extraction

doi:10.1109/LED.2007.909850

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Da-Wen	en_US
dc.contributor.author	Cheng, Ming-Lung	en_US
dc.contributor.author	Wang, Shyh-Wei	en_US
dc.contributor.author	Wu, Chung-Cheng	en_US
dc.contributor.author	Chen, Ming-Jer	en_US
dc.date.accessioned	2014-12-08T15:13:03Z	-
dc.date.available	2014-12-08T15:13:03Z	-
dc.date.issued	2007-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2007.909850	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10062	-
dc.description.abstract	A new method of extracting the MOSFET series resistance R-sd is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which, makes the proposed method suitable for short-channel devices.	en_US
dc.language.iso	en_US	en_US
dc.subject	mobility	en_US
dc.subject	MOSFET	en_US
dc.subject	series resistance	en_US
dc.title	A constant-mobility method to enable MOSFET series-resistance extraction	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2007.909850	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1132	en_US
dc.citation.epage	1134	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000251429800019	-
dc.citation.woscount	13	-
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