Title: A constant-mobility method to enable MOSFET series-resistance extraction
Authors: Lin, Da-Wen
Cheng, Ming-Lung
Wang, Shyh-Wei
Wu, Chung-Cheng
Chen, Ming-Jer
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: mobility;MOSFET;series resistance
Issue Date: 1-Dec-2007
Abstract: A new method of extracting the MOSFET series resistance R-sd is proposed. This method requires only simple dc measurements on a single test device. Experimental demonstration is presented, without requiring quantities such as gate-oxide thickness, physical gate length, or effective channel length. The merit of the method stems from the specifically arranged bias conditions in which the channel carrier mobility remains constant for high vertical electric fields. It is this unique property which, makes the proposed method suitable for short-channel devices.
URI: http://dx.doi.org/10.1109/LED.2007.909850
http://hdl.handle.net/11536/10062
ISSN: 0741-3106
DOI: 10.1109/LED.2007.909850
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 12
Begin Page: 1132
End Page: 1134
Appears in Collections:Articles


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