原子解析度下對三、五族元素在矽晶面上氣相生長過程與電子結構的進一步研究(II)

標題:	原子解析度下對三、五族元素在矽晶面上氣相生長過程與電子結構的進一步研究(II) Atomic-Level Investigation of Boron and Phosphorus Chemical Vapor Deposition on Silicon Surfaces (II)
作者:	林登松 DENG-SUNGLIN 交通大學物理研究所
關鍵字:	同步輻射應用研究;超高真空;光電子能譜學;表面物理;材料物理;氣相沈積;掃描探針式電子穿隧顯微鏡;Synchrotron radiation research;Ultra-high vacuum;Photoelectron spectroscopy;Surface physics;Materials physics;Chemical vapor deposition (CVD);Scanning tunneling microscopy (STM)
公開日期:	2000
官方說明文件#:	NSC89-2112-M009-010
URI:	http://hdl.handle.net/11536/100649 https://www.grb.gov.tw/search/planDetail?id=523659&docId=95104
Appears in Collections:	Research Plans

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