新式結構與高介電常數閘極介電層在複晶矽薄膜電晶體之應用(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	雷添福	en_US
dc.contributor.author	LEI TAN-FU	en_US
dc.date.accessioned	2014-12-13T10:48:43Z	-
dc.date.available	2014-12-13T10:48:43Z	-
dc.date.issued	2009	en_US
dc.identifier.govdoc	NSC98-2221-E009-004	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101429	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1902016&docId=315104	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新式結構與高介電常數閘極介電層在複晶矽薄膜電晶體之應用(II)	zh_TW
dc.title	The Study of New Structure and High-K Gate Dielectric for Poly-Si TFTs Application(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans