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dc.contributor.authorCheng, Chun-Huen_US
dc.contributor.authorChiang, Kuo-Chengen_US
dc.contributor.authorPan, Han-Changen_US
dc.contributor.authorHsiao, Chien-Nanen_US
dc.contributor.authorChou, Chang-Pinen_US
dc.contributor.authorMcalister, Sean P.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:13:09Z-
dc.date.available2014-12-08T15:13:09Z-
dc.date.issued2007-11-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.7300en_US
dc.identifier.urihttp://hdl.handle.net/11536/10148-
dc.description.abstractWe have studied the reliability of high-K (K similar to 49) TixHf1-xO (x similar to 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.en_US
dc.language.isoen_USen_US
dc.subjectreliabilityen_US
dc.subjecthigh work functionen_US
dc.subjectMIMen_US
dc.subjectTiHfOen_US
dc.subjectNien_US
dc.titleImproved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrodeen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.7300en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue11en_US
dc.citation.spage7300en_US
dc.citation.epage7302en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251220000025-
dc.citation.woscount12-
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