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dc.contributor.author莊紹勳en_US
dc.contributor.authorChung Steve Sen_US
dc.date.accessioned2014-12-13T10:49:40Z-
dc.date.available2014-12-13T10:49:40Z-
dc.date.issued2009en_US
dc.identifier.govdocNSC98-2221-E009-161-MY3zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/101729-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1903235&docId=315353en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.title下一世代高性能及高可靠性的N通道MOS元件設計及量測技術探討zh_TW
dc.titleKey Design and Measurement Issues for Achieving High Performance and High Reliability Next Generation N-Channel MOSFETsen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
Appears in Collections:Research Plans


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