標題: 奈米隨機存取記憶體的長時間可靠度劣化現象分析與可容忍此劣化現象之設計
Analysis of Long Term Degradation and Degradation-Tolerant Design of Nanoscale CMOS SRAM
作者: 莊景德
Chuang Ching-Te
國立交通大學電子工程學系及電子研究所
公開日期: 2009
官方說明文件#: NSC98-2221-E009-112
URI: http://hdl.handle.net/11536/101736
https://www.grb.gov.tw/search/planDetail?id=1904632&docId=315640
Appears in Collections:Research Plans


Files in This Item:

  1. 982221E009112.PDF

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.