極紫外光微影技術從光源建造、光罩、材料、製程到奈米元件可靠度研究(I)

Abstract

International Technology Roadmap for Semiconductor (ITRS) 2006 指出，EUVL(極紫外光微影)是下一世代32奈米以下微影技術中的主流技術 之一。相對於電子書寫技術，EUVL可延續傳統光學微影的方法以光罩曝光 進行晶片量產，因此美歐日韓等先進半導體產業大國均已投入相當的資源 從事EUVL技術研發。 反觀半導體相關工業雖是台灣的兆元產業，但是因應次世代微影技術 發展，迄今並無EUVL相關的大型研究計畫。本計畫將嘗試整合國家實驗室 (國家同步輻射中心，國家奈米元件實驗室)與大學(交通大學，台灣大學， 成功大學與高雄大學)之儀器與人力資源以啟動台灣EUVL相關技術研究。 本計畫根據工作屬性區分為(I)基礎研發、(II)光學與檢測技術、以及(III) EUVL應用研究等三組。其中(I)基礎研發的主要目的是建立基礎的儀器設備 (EUVL光束線、反射儀和光化學檢測平台)以量測分析基本的材料性質與行 為；(II)光學與檢測技術的主要目的是研發創新的EUVL檢測技術(高效率 光罩檢測與EUV干涉微影設備)以進一步提升EUVL工業應用的可行性； (III)EUVL應用研究的主要目的則是研究探討EUVL應用於奈米元件製造時 可能發生的關鍵問題(輻射損傷、抗反射層、混合微影製程與奈米元件微影 研究)，以提供可行的解決方案。 本計畫將啟動台灣EUVL相關技術研究並整合建立EUVL核心設施，可 提供未來產學界對於EUVL技術研究的可能需求。計畫執行過程中，也將整 合並培育不同專長領域的人才進行EUVL相關的技術研究。如果EUVL技術 成為未來技術主流，本計畫所產生的設備、技術與人力資源將可提供我國 半導體產業珍貴的發展資源。

According the ITRS 2006 report, EUV (@13.5 nm) Lithography will be one of the main streams for the Next generation lithography (NGL) technology with a resolution down to 32nm and beyond. In contrast to e-beam writing, Extreme UV lithography (EUVL) can mass-produce micro chips with mask by adapting conventional optical lithography principle. In consequence, all the leading countries of semiconductor industry have paid many efforts to explore EUVL technologies. Although the related EUVL technologies, including light source, mask, resist, optics and metrology, still wait to be developed to meet the industrial requirements, significant progresses have been achieved in last five years. The semiconductor industry is the major business at Taiwan. However, almost no effort has been done on EUVL in Taiwan for the NGL technology. In this project, we will integrate the resources from the National Labs (NSRRC, NDL) and universities (NCTU, NTU, NCKU, NKU) to initiate the EUVL research program at Taiwan. All the works in this project are divided into three groups of (I) Fundamentals, (II) Optics and Metrology, and (III). EUVL Applications. The objects of groups I (Fundamentals) are establishing the infrastructures (EUVL beamline, reflectometer and resist evaluation platform) to measure and analyze the basic material properties and behaviors in the EUV range. The objects of groups II (Optics and Metrology) are developing novel instruments (High-throughput mask inspection system, EUV interferometer) for EUVL metrology applications. The objects of groups III (EUVL Applications) are exploring the critical issues in device fabrication (radiation damage, anti-reflection coating, mix/match processes, and nano-device patternning) with EUV lithography. This project will initiate the EUVL research and establish the EUVL core facilities in Taiwan, including a SR EUV light source, a resist evaluation system, a high-resolution reflectometer, a high-throughput EUV mask inspection system and a EUV interferometric exposure platform, to meet the coming R&D requirements both from academics and industrials. On executing this project, we will also integrate and accumulate the talents with various expertises to conduct EUV-related researches. Once EUVL is applied for NGL technology in the near future, all the products of this project, including infrastructures, instruments, technologies and manpower will be very precious for Taiwan’s semiconductor industry.