Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang, Hung-Pin D. | en_US |
| dc.contributor.author | Hsu, I-Chen | en_US |
| dc.contributor.author | Lai, Fang-I | en_US |
| dc.contributor.author | Lin, Gray | en_US |
| dc.contributor.author | Hsiao, Ru-Shang | en_US |
| dc.contributor.author | Maleev, Nikolai A. | en_US |
| dc.contributor.author | Blokhin, Sergej A. | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Chi, Jim Yung | en_US |
| dc.date.accessioned | 2014-12-08T15:13:16Z | - |
| dc.date.available | 2014-12-08T15:13:16Z | - |
| dc.date.issued | 2007-10-01 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.6670 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/10259 | - |
| dc.description.abstract | A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | broad-area | en_US |
| dc.subject | submonolayer | en_US |
| dc.subject | quantum-dot | en_US |
| dc.subject | VCSEL | en_US |
| dc.title | Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1143/JJAP.46.6670 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
| dc.citation.volume | 46 | en_US |
| dc.citation.issue | 10A | en_US |
| dc.citation.spage | 6670 | en_US |
| dc.citation.epage | 6672 | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.identifier.wosnumber | WOS:000250266800041 | - |
| dc.citation.woscount | 0 | - |
| Appears in Collections: | Articles | |
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- Characteristics of InGaAs submonolayer quantum-dot and InAs quantum-dot photonic-crystal vertical-cavity surface-emitting lasers / Yang, Hung-Pin D.;Hsu, I. -Chen;Chang, Ya-Hsien;Lai, Fang-I;Yu, Hsin-Chieh
- High-power single-mode submonolayer quantum-dot photonic crystal vertical-cavity surface-emitting lasers / Lai, Fang-I.;Yang, H. P. D.;Lin, G.;Hsu, I. -Chen;Liu, Jui-Nung
- Single-mode InGaAs submonolayer quantum dot photonic crystal VCSELs / Yang, H. P. D.;Hsu, I. C.;Lai, F. I.;Lin, G.;Hsiao, R. S.
- Characteristics of single-mode InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs emitting in the 990 nm range / Yang, Hung-Pin D.;Hsu, I. -Chen;Lai, Fang-I.;Lin, Gray;Hsiao, Ru-Shang
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