Title: 超高效率III-V太陽能晶片之研究
Ultra High Efficiency III-V Solar Cell
Authors: 張翼
CHANG EDWARD YI
國立交通大學材料科學與工程學系(所)
Keywords: epitaxially grown.plasma immersion Si ion implantatio.plasma immersion H ionimplantation.high density plasma deposition SiN cladding layer.flexiblesubstrates.
Issue Date: 2008
Abstract: 
The object of this project is to grow strained SiGe, Ge, GaAs, InGaAs, InAs quantum
dots, InGaAlP by epitaxially grown on silicon wafer. At last to grow a layer of textured
InGaAlP to coarsen, quantum well and multi-junction epitaxy makes solar cell wafers to reach
high efficiency whole spectrum absorption. And then combine plasma immersion Si ion
implantation in order to raise the concentration of N-type photonics devices, to lower the
resistance of junction and plasma immersion H ion implantation, to make dangling bonds of
devices passivated, and to deposit high density plasma SiN cladding layer. Finally, let
thickness of solar cell wafer thinned to 100um, and then combine flexible substrates to make
the highest efficiency of flexible solar cell wafer in the world.
Method:
(1) Use UHV CVD to grow strained SiGe and Ge, and then use MOCVD to grow InGaAs,
InAs quantum dots, InGaAlP, and textured InGaAlP.
(2) Use PECVD to precede plasma immersion Si ion implantation, plasma immersion H ion
implantation, and ICP high density plasma deposition SiN cladding layer.
(3) Use Lithography, etching, and plating process to make photonics devices, and let it to be
polished and wet etched, and then make wafer thinned to 100um, then bonding on flexible
plastic substrates.
Gov't Doc #: NSC97-ET-7009-001-ET
URI: http://hdl.handle.net/11536/102634
https://www.grb.gov.tw/search/planDetail?id=1618328&docId=276734
Appears in Collections:Research Plans