完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiang, S. W.en_US
dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:13:17Z-
dc.date.available2014-12-08T15:13:17Z-
dc.date.issued2007-10-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-007-0232-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/10270-
dc.description.abstractSolder joints with Cu columns appear to be one of the best structures to resist electromigration. Three-dimensional thermoelectrical analysis was employed to simulate the current density and temperature distributions for eutectic SnPb solder bumps with 0.5, 5, 25, 50, and 100 mu m Cu under bump metallization (UBM). It was found that the hot spots and current crowding effects in the solder were reduced significantly when the Cu thickness was over 50 Pm, whereas the overall Joule heating effect remained almost unchanged. The mechanism by which the Cu column is effective in relieving the hot spot and current crowding effects is to keep the solder away from the heat source and crowding region. Simulated at a current of 0.6 A and 70 degrees C, the estimated mean time to failure of the joints with a 50-mu m-thick Cu column was 6.7 times longer than that of joints with a 0.5-mu m-thick Cu UBM.en_US
dc.language.isoen_USen_US
dc.subjectelectromigrationen_US
dc.subjectflip-chip solder jointsen_US
dc.subjectJoule heatingen_US
dc.titleRelieving hot-spot temperature during electromigration in solder and current crowding effects bumps by using Cu columnsen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11664-007-0232-3en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume36en_US
dc.citation.issue10en_US
dc.citation.spage1348en_US
dc.citation.epage1354en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000250149200020-
dc.citation.woscount9-
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