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dc.contributor.author蘇彬en_US
dc.contributor.authorSu Pinen_US
dc.date.accessioned2014-12-13T10:51:33Z-
dc.date.available2014-12-13T10:51:33Z-
dc.date.issued2008en_US
dc.identifier.govdocNSC97-2221-E009-162zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/102757-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=1690475&docId=291643en_US
dc.description.abstract在這個計畫中我們對次32 奈米多重閘極SOI CMOS 的元件特性作深入探討 及模型建立。在工作項目一中,我們將建立一個適用於不同buried oxide 厚度的 多重閘極SOI 元件的理論架構,我們的理論計算將涵蓋量子力學及原子等級的 效應。我們的模型可用來預測次32 奈米多重閘極SOI 元件的電性變異及其可微 縮性,將有助於多重閘極元件的設計。在工作項目二中,我們將綜合探討採用不 同製程模組的多重閘極SOI 元件的高頻及類比特性。本研究可用來初步評估多 重閘極SOI CMOS 技術在高頻及類比應用的發展潛力。在工作項目三中,我們 將探討極小尺寸多重閘極元件的介觀現象。本研究對於瞭解次32 奈米多重閘極 SOI 電晶體的載子傳輸特性十分重要。zh_TW
dc.description.abstractIn this project we conduct investigation and modeling for sub-32nm multiple-gate SOI CMOS. In task I, we will establish a theoretical framework for multi-gate SOI devices with various buried oxide thickness. We will further enhance our theoretical calculations by including quantum-mechanical and atomistic effects. Our model will be used to predict the variability and scalability of sub-32nm multi-gate SOI devices, and will be instrumental in multi-gate device design. In task II, we will conduct a comprehensive investigation of the RF/analog performance for multi-gate SOI devices fabricated by various process modules. Our investigation will be instrumental in early anticipation of the potentials of multi-gate SOI CMOS technology for RF/analog applications. In task III, we will investigate the mesoscopic phenomena in ultra-scaled multi-gate devices. Our investigation will be crucial to the understanding of carrier transport in sub-32nm multi-gate SOI MOSFETs.en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject多重閘極SOI CMOSzh_TW
dc.subject量子效應zh_TW
dc.subject原子效應zh_TW
dc.subject變異性zh_TW
dc.subject微縮性zh_TW
dc.subject元件設計zh_TW
dc.subject高頻及類比特性zh_TW
dc.subject介觀現象zh_TW
dc.subject載子傳輸zh_TW
dc.subjectmultiple-gate SOI CMOSen_US
dc.subjectquantum-mechanical effecten_US
dc.subjectatomistic effecten_US
dc.subjectvariabilityen_US
dc.subjectscalabilityen_US
dc.subjectdevice designen_US
dc.subjectRF/analogen_US
dc.subjectmesoscopic phenomenaen_US
dc.subjectcarrier transporten_US
dc.title次32奈米多重閘極元件的特性分析與模式建立---變異性與微縮性,高頻類比特性,以及介觀現象的探討zh_TW
dc.titleInvestigation and Modeling for Sub-32nm Multiple-Gate SOI CMOSen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系及電子研究所zh_TW
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