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dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChiang, T. H.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:13:20Z-
dc.date.available2014-12-08T15:13:20Z-
dc.date.issued2007-09-24en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2790376en_US
dc.identifier.urihttp://hdl.handle.net/11536/10317-
dc.description.abstractThree-dimensional modeling is employed to simulate various Kelvin structures for detecting the change in bump resistance due to void formation and propagation during electromigration in flip-chip solder joints. It is found that the Kelvin structures can sense the highest voltage drop when its voltage probes are placed at the current entrance into the bump on the chip side, and it is thus the most sensitive design to monitor void formation and propagation. When the bump resistance increases 20% of its initial value, the depletion percentage of contact opening ranges from 21.0% to 65.0%, depending on the position of the probes. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleEffect of void propagation on bump resistance due to electromigration in flip-chip solder joints using Kelvin structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2790376en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue13en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000249787000047-
dc.citation.woscount13-
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