Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 吳耀銓 | en_US |
| dc.contributor.author | 王寶明 | en_US |
| dc.contributor.author | 蕭豐慶 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:04Z | - |
| dc.date.available | 2014-12-16T06:12:04Z | - |
| dc.date.issued | 2012-09-16 | en_US |
| dc.identifier.govdoc | H01L021/324 | zh_TW |
| dc.identifier.govdoc | H01L033/00 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103385 | - |
| dc.description.abstract | 本發明提供一種半導體製程方法,包含下列步驟:提供一成長基板;在該成長基板上形成一半導體基板;在該半導體基板與該成長基板之間形成一第一凹凸結構;以及改變該成長基板與該半導體基板的溫度。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體製程方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201237963 | zh_TW |
| Appears in Collections: | Patents | |
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