完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Hung, Chi-Chao | en_US |
| dc.contributor.author | Oates, Anthony S. | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Chang, Yu-En Percy | en_US |
| dc.contributor.author | Wang, Jia-Lian | en_US |
| dc.contributor.author | Huang, Cheng-Chung | en_US |
| dc.contributor.author | Yau, You-Wen | en_US |
| dc.date.accessioned | 2014-12-08T15:13:23Z | - |
| dc.date.available | 2014-12-08T15:13:23Z | - |
| dc.date.issued | 2007-09-01 | en_US |
| dc.identifier.issn | 1530-4388 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TDMR.2007.907406 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/10355 | - |
| dc.description.abstract | This paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | capacitance | en_US |
| dc.subject | constant-current stress (CCS) | en_US |
| dc.subject | interface | en_US |
| dc.subject | metal-insulator-metal (MIM) | en_US |
| dc.title | An innovative understanding of metal-insulator-metal (MIM)-capacitor degradation under constant-current stress | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1109/TDMR.2007.907406 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
| dc.citation.volume | 7 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 462 | en_US |
| dc.citation.epage | 467 | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.identifier.wosnumber | WOS:000252913700009 | - |
| dc.citation.woscount | 7 | - |
| 顯示於類別: | 期刊論文 | |

