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dc.contributor.authorHung, Chi-Chaoen_US
dc.contributor.authorOates, Anthony S.en_US
dc.contributor.authorLin, Horng-Chihen_US
dc.contributor.authorChang, Yu-En Percyen_US
dc.contributor.authorWang, Jia-Lianen_US
dc.contributor.authorHuang, Cheng-Chungen_US
dc.contributor.authorYau, You-Wenen_US
dc.date.accessioned2014-12-08T15:13:23Z-
dc.date.available2014-12-08T15:13:23Z-
dc.date.issued2007-09-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2007.907406en_US
dc.identifier.urihttp://hdl.handle.net/11536/10355-
dc.description.abstractThis paper provides a new understanding of metal-insulator-metal-capacitor-degradation behavior under a wide range of constant-current-stress conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress-current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current and reverses after a certain period of time. A metal-insulator interlayer is observed using cross-sectional transmission-electron-microscopy micrographs, which possibly explains this reversal phenomenon.en_US
dc.language.isoen_USen_US
dc.subjectcapacitanceen_US
dc.subjectconstant-current stress (CCS)en_US
dc.subjectinterfaceen_US
dc.subjectmetal-insulator-metal (MIM)en_US
dc.titleAn innovative understanding of metal-insulator-metal (MIM)-capacitor degradation under constant-current stressen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2007.907406en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume7en_US
dc.citation.issue3en_US
dc.citation.spage462en_US
dc.citation.epage467en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000252913700009-
dc.citation.woscount7-
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