Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張俊彥 | en_US |
| dc.contributor.author | 張耀峰 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:21Z | - |
| dc.date.available | 2014-12-16T06:12:21Z | - |
| dc.date.issued | 2011-05-01 | en_US |
| dc.identifier.govdoc | H01L027/108 | zh_TW |
| dc.identifier.govdoc | H01L021/8242 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103606 | - |
| dc.description.abstract | 一種電阻式記憶體元件,包含:一第一電極;一第二電極,配置於該第一電極上方;一介電層,配置於該第一電極與該第二電極之間;以及電極混合系統層,配置於該第一電極與該介電層之間,其中該第一電極與該第二電極之至少一者係由一過渡態金屬元素所構成,並且其中於該電極混合系統層與該介電層之間更可藉由CVD或退火製程而包含一由氧化鐵(FeO)或氧化鈷(CoO)所構成之第一電阻轉態層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 電阻式隨機存取記憶體以及其製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201115721 | zh_TW |
| Appears in Collections: | Patents | |
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