標題: Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser
作者: Huang, Y. P.
Liang, H. C.
Huang, J. Y.
Su, K. W.
Li, A.
Chen, Y. F.
Huang, K. F.
電子物理學系
Department of Electrophysics
公開日期: 1-Sep-2007
摘要: lnGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 mu J at a pulse repetition rate of 55 kHz. (c) 2007 Optical Society of America.
URI: http://dx.doi.org/10.1364/AO.46.006273
http://hdl.handle.net/11536/10365
ISSN: 0003-6935
DOI: 10.1364/AO.46.006273
期刊: APPLIED OPTICS
Volume: 46
Issue: 25
起始頁: 6273
結束頁: 6276
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