標題: Enhanced hole mobility and reliability of panel epi-like silicon transistors using backside green laser activation
作者: Lin, Yu-Ting
Shieh, Jia-Min
Chen, Chih
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: backside green laser activation;continuous-wave (CW) laser crystallization (CLC);epi-like Si transistors
公開日期: 1-Sep-2007
摘要: The hole mobility and reliability of green continuous-wave laser-crystallized epi-like Si transistors on glass panel substrates were enhanced by source/drain activation by backside green laser irradiation. Green laser energy was scanned uniformly across junctions since the gate structures included no interference, in an attempt to conduct super visible-laser lateral activation. The enhancement was thus explained by the formation of continuous improved epi-like Si microstructures with reduced grain defects and with a barely increased number of interface defects over the entire channel/junction. The hole mobility in such laser-activated devices was as high as 403 cm(2)/V center dot s, which doubles that of thermally activated devices.
URI: http://dx.doi.org/10.1109/LED.2007.902984
http://hdl.handle.net/11536/10412
ISSN: 0741-3106
DOI: 10.1109/LED.2007.902984
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 28
Issue: 9
起始頁: 790
結束頁: 792
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