Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 莊景德 | en_US |
dc.contributor.author | 周世傑 | en_US |
dc.contributor.author | 林耕慶 | en_US |
dc.contributor.author | 王紹丞 | en_US |
dc.contributor.author | 林宜緯 | en_US |
dc.contributor.author | 蔡銘謙 | en_US |
dc.contributor.author | 石維強 | en_US |
dc.contributor.author | 連南鈞 | en_US |
dc.contributor.author | 李坤地 | en_US |
dc.contributor.author | 朱俊愷 | en_US |
dc.date.accessioned | 2014-12-16T06:13:37Z | - |
dc.date.available | 2014-12-16T06:13:37Z | - |
dc.date.issued | 2014-02-01 | en_US |
dc.identifier.govdoc | G01R031/3173 | zh_TW |
dc.identifier.govdoc | G11C016/02 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104241 | - |
dc.description.abstract | 本發明係揭露一種臨界電壓量測裝置,其係連接一六電晶體靜態隨機存取記憶體,此記憶體包含二反向器,其係分別連接一場效電晶體,其中一反向器之電源端為浮接,且與此反向器連接之場效電晶體之源極與汲極相互短路,並利用此架構施加不同偏壓,再配合二電壓選擇器、一電阻、一放大器與上述記憶體構成負回授連接方式,以量測出另一反向器之二場效電晶體,及與其連接之場效電晶體之臨界電壓。本發明不用改變六電晶體靜態隨機存取記憶體之物理結構,就可以用單一電路架構量測三顆場效電晶體之臨界電壓,大幅降低製程、量測與時間成本。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 臨界電壓量測裝置 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | I425236 | zh_TW |
Appears in Collections: | Patents |
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