Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chuang Ching-Te | en_US |
dc.contributor.author | Lien Nan-Chun | en_US |
dc.contributor.author | Liao Wei-Nan | en_US |
dc.contributor.author | Chang Chi-Hsin | en_US |
dc.contributor.author | Yang Hao-I | en_US |
dc.contributor.author | Hwang Wei | en_US |
dc.contributor.author | Tu Ming-Hsien | en_US |
dc.date.accessioned | 2014-12-16T06:13:47Z | - |
dc.date.available | 2014-12-16T06:13:47Z | - |
dc.date.issued | 2014-10-07 | en_US |
dc.identifier.govdoc | G11C007/10 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/104336 | - |
dc.description.abstract | A static random access memory apparatus and a bit-line voltage controller includes a controller, a pull-up circuit, a pull-down circuit and a voltage keeping circuit. The controller receives a bank selecting signal and a clock signal, and decides a pull-up time period, a pull-down time period and a voltage keeping time period according to the bank selecting signal and the clock signal. The pull-up circuit pulls up a bit-line power according to a first reference voltage within the pull-up time period. The pull-down circuit pulls down the bit-line power according to a second reference voltage within the pull-down time period. The voltage keeping circuit keeps the bit-line power to equal to an output voltage during the voltage keeping time period. The voltage keeping time period is after the pull-up time period and the pull-down time period. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | Static random access memory apparatus and bit-line voltage controller thereof | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 08854897 | zh_TW |
Appears in Collections: | Patents |
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