標題: | Multi-bit resistive-switching memory cell and array |
作者: | Hou Tuo-Hung Wu Shih-Chieh |
公開日期: | 1-Apr-2014 |
摘要: | This invention proposes a multi-bit resistive-switching memory cell and array thereof. Multiple conduction paths are formed on each memory cell and independent of each other, and each conduction path can be in a high-resistance or low-resistance state, so as to form a multi-bit resistive-switching memory cell. A memory cell array can be formed by arranging a plurality of multi-bit resistive-switching memory cells, and the memory cell array provides a simple, high density, high performance and cost-efficient proposal. |
官方說明文件#: | G11C007/22 |
URI: | http://hdl.handle.net/11536/104395 |
專利國: | USA |
專利號碼: | 08687432 |
Appears in Collections: | Patents |
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