III-V metal-oxide-semiconductor device

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DC 欄位	值	語言
dc.contributor.author	Chang Edward Yi	en_US
dc.contributor.author	Lin Yueh-Chin	en_US
dc.date.accessioned	2014-12-16T06:13:59Z	-
dc.date.available	2014-12-16T06:13:59Z	-
dc.date.issued	2013-08-27	en_US
dc.identifier.govdoc	H01L021/02	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104450	-
dc.description.abstract	A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	III-V metal-oxide-semiconductor device	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	08519488	zh_TW
顯示於類別：	專利資料

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