III-V METAL-OXIDE-SEMICONDUCTOR DEVICE

標題:	III-V METAL-OXIDE-SEMICONDUCTOR DEVICE
作者:	CHANG Edward Yi LIN Yueh-Chin
公開日期:	6-Jun-2013
摘要:	A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.
官方說明文件#:	H01L029/78
URI:	http://hdl.handle.net/11536/105039
專利國:	USA
專利號碼:	20130140647
Appears in Collections:	Patents

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