III-V metal-oxide-semiconductor device

標題:	III-V metal-oxide-semiconductor device
作者:	Chang Edward Yi Lin Yueh-Chin
公開日期:	27-Aug-2013
摘要:	A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.
官方說明文件#:	H01L021/02
URI:	http://hdl.handle.net/11536/104450
專利國:	USA
專利號碼:	08519488
Appears in Collections:	Patents

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.