完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHANG Edward Yi | en_US |
dc.contributor.author | LIN Yueh-Chin | en_US |
dc.date.accessioned | 2014-12-16T06:14:59Z | - |
dc.date.available | 2014-12-16T06:14:59Z | - |
dc.date.issued | 2013-06-06 | en_US |
dc.identifier.govdoc | H01L029/78 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/105039 | - |
dc.description.abstract | A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer. | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | III-V METAL-OXIDE-SEMICONDUCTOR DEVICE | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | zh_TW |
dc.citation.patentnumber | 20130140647 | zh_TW |
顯示於類別: | 專利資料 |