Method for fabricating a resistor for a resistance random access memory

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DC 欄位	值	語言
dc.contributor.author	Tseng Tseung-Yuen	en_US
dc.contributor.author	Wang Sheng-Yu	en_US
dc.contributor.author	Tsai Chen-Han	en_US
dc.date.accessioned	2014-12-16T06:14:01Z	-
dc.date.available	2014-12-16T06:14:01Z	-
dc.date.issued	2013-06-25	en_US
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.govdoc	H01L021/00	zh_TW
dc.identifier.govdoc	H01L021/16	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104470	-
dc.description.abstract	A method for fabricating a resistor for a resistance random access memory (RRAM) includes: (a) forming a first electrode over a substrate; (b) forming a variable resistance layer of zirconium oxide on the first electrode under a working temperature, which ranges from 175° C. to 225° C.; and (c) forming a second electrode of Ti on the variable resistance layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Method for fabricating a resistor for a resistance random access memory	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	08470637	zh_TW
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