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dc.contributor.authorChang Edward Yien_US
dc.contributor.authorHuang Lu-Cheen_US
dc.contributor.authorChang Chia-Huaen_US
dc.contributor.authorLin Yueh-Chinen_US
dc.contributor.authorChieng Wei-Huaen_US
dc.contributor.authorLiu Shih-Chienen_US
dc.date.accessioned2014-12-16T06:14:02Z-
dc.date.available2014-12-16T06:14:02Z-
dc.date.issued2013-05-07en_US
dc.identifier.govdocH01L021/3205zh_TW
dc.identifier.govdocH01L021/4763zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104482-
dc.description.abstractA method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.zh_TW
dc.language.isozh_TWen_US
dc.titleMethod for forming T-shaped gate structurezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08435875zh_TW
Appears in Collections:Patents


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