標題: Growth of polycrystalline tubular silicon carbide Yajima-type reaction at the vapor-solid interface
作者: Wang, Chia-Hsin
Lin, Huang-Kai
Ke, Tsung-Ying
Palathinkal, Thomas-Joseph
Tai, Nyan-Hwa
Lin, I-Nan
Lee, Chi-Young
Chiu, Hsin-Tien
應用化學系
Department of Applied Chemistry
公開日期: 7-Aug-2007
摘要: Polycrystalline tubular SiC on Si is prepared by reacting MeSiHCl2 vapor and Ca thin film on Si at 773-923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor-solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/mu m with a current of 10 mu A/cm(2).
URI: http://dx.doi.org/10.1021/cm070925e
http://hdl.handle.net/11536/10449
ISSN: 0897-4756
DOI: 10.1021/cm070925e
期刊: CHEMISTRY OF MATERIALS
Volume: 19
Issue: 16
起始頁: 3956
結束頁: 3962
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