Growth of polycrystalline tubular silicon carbide Yajima-type reaction at the vapor-solid interface

Abstract

Polycrystalline tubular SiC on Si is prepared by reacting MeSiHCl2 vapor and Ca thin film on Si at 773-923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor-solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/mu m with a current of 10 mu A/cm(2).