標題: | Gate oxide breakdown-withstanding power switch structure |
作者: | Yang Hao-I Chuang Ching-Te Hwang Wei |
公開日期: | 26-二月-2013 |
摘要: | The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected. |
官方說明文件#: | G11C005/14 G11C011/00 |
URI: | http://hdl.handle.net/11536/104504 |
專利國: | USA |
專利號碼: | 08385149 |
顯示於類別: | 專利資料 |