標題: Gate oxide breakdown-withstanding power switch structure
作者: Yang Hao-I
Chuang Ching-Te
Hwang Wei
公開日期: 26-二月-2013
摘要: The present invention proposes a gate oxide breakdown-withstanding power switch structure, which is connected with an SRAM and comprises a first CMOS switch and a second CMOS switch respectively having different gate-oxide thicknesses or different threshold voltages. The CMOS switch, which has a normal gate-oxide thickness or a normal threshold voltage, provides current for the SRAM to wake up the SRAM from a standby or sleep mode to an active mode. The CMOS switch, which has a thicker gate-oxide thickness or a higher threshold voltage, provides current for the SRAM to work in an active mode. The present invention prevents a power switch from gate-oxide breakdown lest noise margin, stabilization and performance of SRAM be affected.
官方說明文件#: G11C005/14
G11C011/00
URI: http://hdl.handle.net/11536/104504
專利國: USA
專利號碼: 08385149
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