Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 張嘉華 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.date.accessioned | 2014-12-16T06:14:10Z | - |
| dc.date.available | 2014-12-16T06:14:10Z | - |
| dc.date.issued | 2013-12-21 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/335 | zh_TW |
| dc.identifier.govdoc | H01L021/28 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/104542 | - |
| dc.description.abstract | 本發明揭示一種增強式高電子移動率電晶體及其製造方法，其包括：一緩衝層，磊晶於一基板上；一源級及汲級，形成於該緩衝層上；複數個P-N接面，其係由多層堆疊之P-N接面形成於該緩衝層上、及該源級與汲級之間；及一閘極，形成於該等P-N接面之堆疊上；其中該P-N接面係由一P型及一N型半導體層所構成。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 增強式高電子移動率電晶體及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I420664 | zh_TW |
| Appears in Collections: | Patents | |
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