標題: Manufacture method of a multilayer structure having non-polar a-plane {11-20} III-nitride layer
作者: Lee Wei-I
Chen Jenn-Fang
Chiang Chen-Hao
公開日期: 19-Jul-2011
摘要: A manufacture method of a multilayer structure having a non-polar a-plane {11-22} III-nitride layer includes forming a nucleation layer on a r-plane substrate, wherein the nucleation layer is composed of multiple nitride layers; and forming a non-polar a-plane {11-20} III-nitride layer on the nucleation layer. The nucleation layer features reduced stress, reduced phase difference of lattice, blocked elongation of dislocation, and reduced density of dislocation. Thus, the non-polar a-plane {11-20} III-nitride layer with flat surface can be formed.
官方說明文件#: H01L031/06
H01L021/20
H01L021/36
H01L021/00
URI: http://hdl.handle.net/11536/104648
專利國: USA
專利號碼: 07981711
Appears in Collections:Patents


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