標題: | Method for fabricating nanoscale thermoelectric device |
作者: | Chao Chuen-Guang Chen Jung-Hsuan Yang Ta-Wei |
公開日期: | 14-六月-2011 |
摘要: | The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency. |
官方說明文件#: | H01L021/76 H01L021/44 H01L021/22 H01L021/38 H01L021/20 H01L021/36 |
URI: | http://hdl.handle.net/11536/104661 |
專利國: | USA |
專利號碼: | 07960258 |
顯示於類別: | 專利資料 |