標題: Method for fabricating nanoscale thermoelectric device
作者: Chao Chuen-Guang
Chen Jung-Hsuan
Yang Ta-Wei
公開日期: 14-六月-2011
摘要: The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.
官方說明文件#: H01L021/76
H01L021/44
H01L021/22
H01L021/38
H01L021/20
H01L021/36
URI: http://hdl.handle.net/11536/104661
專利國: USA
專利號碼: 07960258
顯示於類別:專利資料


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