標題: Etching method for nitride semiconductor
作者: Lee
Wei-I
Huang
Hsin-Hsiung
Zeng
Hung-Yu
公開日期: 15-Feb-2011
摘要: The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.
官方說明文件#: H01L021/302
H01L021/461
H01L021/20
H01L021/36
H01L021/311
URI: http://hdl.handle.net/11536/104680
專利國: USA
專利號碼: 07888270
Appears in Collections:Patents


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