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dc.contributor.authorChiouen_US
dc.contributor.authorJin-Chernen_US
dc.contributor.authorChangen_US
dc.contributor.authorChih-Weien_US
dc.date.accessioned2014-12-16T06:14:22Z-
dc.date.available2014-12-16T06:14:22Z-
dc.date.issued2011-01-25en_US
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.govdocH01L023/48zh_TW
dc.identifier.govdocH01L023/52zh_TW
dc.identifier.govdocH01L029/40zh_TW
dc.identifier.govdocH01L021/44zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104685-
dc.description.abstractThe present invention discloses an integration structure of a semiconductor circuit and microprobe sensing elements and a method for fabricating the same. In the method of the present invention, a semiconductor circuit is fabricated on one surface of a semiconductor substrate, and the other surface of the semiconductor substrate is etched to form a microprobe structure for detect physiological signals. Next, a deposition method is used to sequentially form an electrical isolated layer and an electrical conductive layer on the microprobes. Then, an electrical conductive material is used to electrically connect the electrical conductive layer with the electrical pads of the semiconductor circuit. Thus is achieved the integration of a semiconductor circuit and microprobe sensing elements in an identical semiconductor substrate with the problem of electric electrical isolated being solved simultaneously. Thereby, the voltage level detected by the microprobes will not interfere with the operation of the semiconductor circuit.zh_TW
dc.language.isozh_TWen_US
dc.titleIntegration structure of semiconductor circuit and microprobe sensing elements and method for fabricating the samezh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07875479zh_TW
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