Super leakage current cut-off device for ternary content addressable memory

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang	en_US
dc.contributor.author	Po-Tsang	en_US
dc.contributor.author	Liu	en_US
dc.contributor.author	Wen-Yen	en_US
dc.contributor.author	Hwang	en_US
dc.contributor.author	Wei	en_US
dc.date.accessioned	2014-12-16T06:14:27Z	-
dc.date.available	2014-12-16T06:14:27Z	-
dc.date.issued	2009-11-10	en_US
dc.identifier.govdoc	G11C005/14	zh_TW
dc.identifier.govdoc	G11C015/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/104737	-
dc.description.abstract	A super leakage current cut-off device for a ternary content addressable memory (TCAM) is provided. For various operations of the TCAM, the device uses the high-end and low-end power gating control transistors to turn on/off the don't-care cells to reduce the leakage current passing through the don't-care cells.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Super leakage current cut-off device for ternary content addressable memory	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	07616469	zh_TW
顯示於類別：	專利資料

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