標題: Structure of high power edge emission laser diode
作者: Lu
Tien-Chang
Chen
Chyong-Hua
公開日期: 18-八月-2009
摘要: A structure of high power edge emission laser diode that has plural mode extension sublayers with a chirp periodic distribution is provided. The Near Field Pattern (NFP) is an L shape, and the high intensity portion is nicely overlapped with the multi quantum wells. Furthermore, the low intensity portion will extend to the n-type cladding as it can as possible. Accordingly, the optical power density on the mirror surface of the high power edge emission laser diode is lower down and the vertical divergence angle is decreased, so as to prolong its lifetime.
官方說明文件#: H01S005/00
H01S003/04
URI: http://hdl.handle.net/11536/104744
專利國: USA
專利號碼: 07577175
顯示於類別:專利資料


文件中的檔案:

  1. 07577175.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。