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dc.contributor.authorKeren_US
dc.contributor.authorMing-Douen_US
dc.contributor.authorHsuen_US
dc.contributor.authorKuo-Chunen_US
dc.date.accessioned2014-12-16T06:14:29Z-
dc.date.available2014-12-16T06:14:29Z-
dc.date.issued2008-10-14en_US
dc.identifier.govdocH01L029/66zh_TW
dc.identifier.govdocH01L023/62zh_TW
dc.identifier.govdocH02H003/22zh_TW
dc.identifier.govdocH01L027/085zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104761-
dc.description.abstractAn ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.zh_TW
dc.language.isozh_TWen_US
dc.titleElectrostatic discharge protection circuit using a double-triggered silicon controlling rectifierzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber07436041zh_TW
Appears in Collections:Patents


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