標題: | Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology |
作者: | Chang Edward Y. Lee Huang-Ming |
公開日期: | 13-九月-2005 |
摘要: | The invention relates to a method for fabricating nanometer gate semiconductor device using thermally reflowed photoresist technology, comprising steps of (i) spin-coating two layers of photoresists on a substrate, where a bottom layer of photoresist is a polymeric photoresist having a lower sensitivity and a higher resolution, and a top layer of photoresist, is another polymeric photoresist having a higher sensitivity and a lower resolution, with respect to the electron beam; (ii) heating the photoresists for curing by way of using a hotplate; (iii) using photolithography in an electron beam direct writing manner to expose a pattern on the photoresists for forming a gate; (iv) using a developer and an etchant for developing and etching to form a recess on the gate; (v) plating a metallic layer on the recess of the gate using an electron gun evaporation technique; and (vi) removing the photoresists to obtain the gate, characterized in that after the etching of the recess of the gate, the photoresists are reflowed by using a hot plate heating manner within a predetermined period of time and temperature, such that the recess of the gate is formed with a nanometer-sized width. |
官方說明文件#: | H01L021/00 G03F001/00 G03F007/00 H01L021/338 H01L021/302 H01L021/461 |
URI: | http://hdl.handle.net/11536/104830 |
專利國: | USA |
專利號碼: | 06943068 |
顯示於類別: | 專利資料 |