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dc.contributor.authorChenen_US
dc.contributor.authorSan-Yuanen_US
dc.contributor.authorSunen_US
dc.contributor.authorChia-Liangen_US
dc.contributor.authorChinen_US
dc.contributor.authorAlberten_US
dc.date.accessioned2014-12-16T06:14:37Z-
dc.date.available2014-12-16T06:14:37Z-
dc.date.issued2005-02-08en_US
dc.identifier.govdocH01L021/8238zh_TW
dc.identifier.govdocH01L021/00zh_TW
dc.identifier.govdocH01L021/8234zh_TW
dc.identifier.govdocH01L021/8244zh_TW
dc.identifier.govdocH01L021/20zh_TW
dc.identifier.govdocH01L021/8242zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104835-
dc.description.abstractThe present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.zh_TW
dc.language.isozh_TWen_US
dc.titleFerroelectric thin film processing for ferroelectric field-effect transistorzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber06852549zh_TW
Appears in Collections:Patents


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