標題: | Ferroelectric thin film processing for ferroelectric field-effect transistor |
作者: | Chen, San-Yuan Chin, Albert Sun, Chia-Liang |
公開日期: | 4-十二月-2003 |
摘要: | The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film. |
官方說明文件#: | H01L021/00 H01L021/20 |
URI: | http://hdl.handle.net/11536/105785 |
專利國: | USA |
專利號碼: | 20030224537 |
顯示於類別: | 專利資料 |