Ferroelectric thin film processing for ferroelectric field-effect transistor

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, San-Yuan	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Sun, Chia-Liang	en_US
dc.date.accessioned	2014-12-16T06:16:20Z	-
dc.date.available	2014-12-16T06:16:20Z	-
dc.date.issued	2003-12-04	en_US
dc.identifier.govdoc	H01L021/00	zh_TW
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105785	-
dc.description.abstract	The present invention relates to a method for manufacturing a ferroelectric field-effect transistor, particularly to a ferroelectric field-effect transistor with a metal/ferroelectric/insulator/semiconductor (MFIS) gate capacitor structure. The method comprises steps of depositing a bismuth layered ferroelectric film on the insulator buffered Si, after a high-temperature thermal treatment, depositing an upper electrode on the bismuth layered ferroelectric film.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Ferroelectric thin film processing for ferroelectric field-effect transistor	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20030224537	zh_TW
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